Conferences

[NANO KOREA 2014] Bipolar Resistive Switching Characteristics in NbON/NbN Thin Films Based Resistive Switching Memory Devices

2014
작성자
김나현
작성일
2014-07-04 15:35
조회
239

02 - 04 Jul. 2014

NANO KOREA 2014, Seoul Korea

[poster]

Bipolar Resistive Switching Characteristics in NbON/NbN Thin Films Based Resistive Switching Memory Devices

Hee-Dong Kim, Min Ju Yun, Ju Hyun Park, Dong Su Jeon, Jung Yong Gwon, and Tae Geun Kim*

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