Conferences

[ENGE 2012] Improved Reliability of Ti/ZrN/Pt Resistive Switching Memory Cells due to a N2-H2 Postannealing Treatment

2012
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김나현
작성일
2012-12-18 16:43
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221

16 - 18 December 2012

ENGE 2012, Jeju Korea

[poster]

Improved Reliability of Ti/ZrN/Pt Resistive Switching Memory Cells due to a N2-H2 Postannealing Treatment

Hee Dong Kim, Seok Man Hong, Ho Myoung An, Kyeong Heon Kim, Yu Jeong Seo, Dongming Li, and Tae Geun Kim*

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