Conferences

[IUMRS-ICEM 2010] The effect of substrate misorientation on the activation properties of p-GaN grown on r-plane sapphire

2010
작성자
김나현
작성일
2010-08-27 10:07
조회
149

AUG 22-27, 2010

IUMRS-ICEM 2010, KINTEX, GyeongGi-Do, Korea 

[poster]

The effect of substrate misorientation on the activation properties of p-GaN grown on r-plane sapphire

Ji-Su Son, Jae-burn Kim, Kwang-Hyun Baek, Sug-Ho Lee, Sung-Min Hwang, and Tae-Geun Kim*

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