Papers

Reduction of the Gate Leakage Current in Binary-trench-insulatedGate AlGaN/GaN High-electron-mobility Transistors (IF 0.535 ; JCR 39.691%)

2004~2009
작성자
김태형
작성일
2009-06-18 15:01
조회
133

저널명 : Journal of the Korean Physical Society, 55, No. 1, 356 (2009, JUL)


논문 저자
Su Jin Kim, Dong Ho Kim, Jae Moo Kim, Kang Min Jung, Hong Goo Choi, Cheol-Koo Hahn, Tae Geun Kim
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