Papers

전체 248
번호 제목 작성자 작성일 추천 조회
21
Bipolar resistive-switching phenomena and resistive-switching mechanisms observed in zirconium nitride-based resistive-switching memory cells (IF 1.407 ; JCR 71.617% )
유경종 | 2013.05.24 | 추천 0 | 조회 64
유경종 2013.05.24 0 64
20
Improved thermal stability and reduced contact resistance of ohmic contacts on N-Face n-type GaN with laser-assisted doping (IF 4.221 ; JCR 17.857% )
유경종 | 2013.05.24 | 추천 0 | 조회 64
유경종 2013.05.24 0 64
19
A CMOS-process-compatible ZnO-based charge-trap flash memory (IF 4.221 ; JCR 17.857% )
유경종 | 2013.05.24 | 추천 0 | 조회 71
유경종 2013.05.24 0 71
18
Forming‐free Si N‐based resistive switching memory prepared by RF sputtering (IF 1.759 ; JCR 63.043% )
유경종 | 2013.05.24 | 추천 0 | 조회 70
유경종 2013.05.24 0 70
17
Improved performance of GaN-based vertical light emitting diodes with conducting and transparent single-walled carbon nanotube networks (IF 3.669 ; JCR 19.072% )
유경종 | 2013.05.24 | 추천 0 | 조회 81
유경종 2013.05.24 0 81
16
A four-bit-per-cell program method with substrate-bias assisted hot electron injection for charge trap flash memory devices (IF 1.134 ; JCR 77.119% )
유경종 | 2013.05.24 | 추천 0 | 조회 75
유경종 2013.05.24 0 75
15
Observation of highly reproducible resistive-switching behavior from solution-based ZnO nanorods (IF 1.134 ; JCR 77.119% )
유경종 | 2013.05.24 | 추천 0 | 조회 89
유경종 2013.05.24 0 89
14
Indium tin oxide-rod/single walled carbon nanotube based transparent electrodes for ultraviolet light-emitting diodes (IF 2.03 ; JCR 51.935% )
유경종 | 2013.05.24 | 추천 0 | 조회 144
유경종 2013.05.24 0 144
13
Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode (IF 2.03 ; JCR 51.935% )
유경종 | 2013.05.24 | 추천 0 | 조회 65
유경종 2013.05.24 0 65
12
Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications (IF 4.019 ; JCR 29.777% )
유경종 | 2013.05.24 | 추천 0 | 조회 71
유경종 2013.05.24 0 71
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