Papers

Improved Performance in Charge Trap type Flash memories with an Al2O3 dielectric by Bandgap Engineering of Charge-Trapping Layers (IF 0.535; JCR 67.419%)

2004~2009
작성자
김태형
작성일
2009-06-18 14:36
조회
190

저널명 : Journal of the Korean Physical Society, Vol. 55, No 6, 2689 (2009, DEC)

논문 저자
Yu Jeong Seo, Ho Myoung An, Hee Dong Kim and Tae Geun Kim
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