Papers

High-breakdown-voltage InGaN/GaN MQW LED Achieved by Using a Varied-barrier-growth-temperature Method (IF 0.535; JCR 93.529%)

2004~2009
작성자
김태형
작성일
2009-06-18 15:10
조회
194

저널명 : Journal of the Korean Physical Society, 55:1219-1222 (2009, SEP)

논문 저자
Shi Jong Leem, Young Chul Shin, Eun Hong Kim, Chul Min Kim, Byoung Gyu Lee, Wan Ho Lee, Tae Geun Kim and Young boo Moon
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