Papers

Negative/positive-bias instability analysis of the memory characteristics improved by hydrogen post-annealing in MANOS capacitors (IF 1.407 ; JCR 71.617% )

2010
작성자
유경종
작성일
2010-05-24 13:22
조회
154
저널명 : IEEE Transactions on Device and Materials Reliability, 10(2) 295-300 (2010, JUN)
논문 저자
Hee-Dong Kim, Ho-Myoung An, Yujeong Seo, Yongjie Zhang, and Tae Geun Kim*
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