Papers

High power single lateral-mode operation of InAs quantum dot based ridge type laser diodes by utilizing a double bend waveguide structure (IF 3.597 ; JCR 23.548% )

2010
작성자
유경종
작성일
2010-05-24 13:25
조회
134
저널명 : Applied Physics Letters, 96(26) 261106 (2010, JUL)
논문 저자
Kyoung Chan Kim, Il Ki Han, Jung Il Lee, and Tae Geun Kim*
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