Papers

Improved electrical and reliability characteristics in metal/oxide/nitride/oxide/ silicon capacitors with blocking oxide layers formed under the radical oxidation process (IF 1.134 ; JCR 77.119% )

2010
작성자
유경종
작성일
2010-05-24 13:28
조회
137
저널명 : Journal of Nanoscience and Nanotechnology, 10(7) 4701-4705 (2010, JUL)
논문 저자
Ho-Myoung An, Hee Dong Kim, Yu Jeong Seo, Kyoung Chan Kim, Yun Mo Sung,

Sang-Mo Koo, Jung-Hyuk Koh, and Tae Geun Kim*
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