Papers

A new class of charge-trap flash memory with resistive switching mechanisms (IF 2.913 ; JCR 34.516% )

2010
작성자
유경종
작성일
2010-05-24 13:35
조회
152
저널명 : IEEE Transactions on Electron Devices, 57(10) 2398-2404 (2010, OCT)
논문 저자
Ho-Myoung An, Eui Bok Lee, Hee-Dong Kim, Yu Jeong Seo, and Tae Geun Kim* 
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