Papers

A Direct Observation of the Distributions of Local Trapped-Charges and the Interface-States near the Drain Region of the Silicon–Oxide–Nitride–Oxide–Silicon Device for Reliable Four-Bit/Cell Operations (IF 1.376 ; JCR 72.581% )

2010
작성자
유경종
작성일
2010-05-24 13:42
조회
142
저널명 : Japanese Journal of Applied Physics, 49(11) 114203 (2010, NOV)
논문 저자
Ho-Myoung An, Yongjie Zhang, Hee-Dong Kim, Yu Jeong Seo,

Byungcheul Kim, Joo-Yeon Kim, and Tae Geun Kim*
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