Papers

Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD (IF 1.632 ; JCR 59.615% )

2011
작성자
유경종
작성일
2011-05-24 14:45
조회
197
저널명 : Journal of Crystal Growth, 326(1) 98-102 (2011, JUL)
논문 저자
Ji-Su Son, Kwang Hyeon Baik, Yong Gon Seo, Hooyoung Song, Ji Hoon Kim, Sung-Min Hwang, Tae-Geun Kim*
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