Papers

Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices (IF 2.913 ; JCR 34.516% )

2011
작성자
유경종
작성일
2011-05-24 14:58
조회
174
저널명 : IEEE Transactions on Electron Devices, 58(10) 3566-3573 (2011, OCT)
논문 저자
Hee-Dong Kim, Ho-Myoung An, Eui Bok Lee, and Tae Geun Kim*
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