Papers

High Speed and Low Voltage Performance in a Charge Trapping Flash Memory using a NiO Tunnel Junction (IF 3.169 ; JCR 28.065%)

2011
작성자
유경종
작성일
2011-05-24 16:41
조회
155
저널명 : Journal of Physics D: Appl. Phys. 44(15) (2011, APR)
논문 저자
Yujeong Seo, Ho Myoung An, Hee Dong Kim, In Rok Hwang, Sa Hwan Hong, Bae Ho Park, and Tae-Geun Kim*
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