Papers

Low-Resistance Nonalloyed Ti/Al Ohmic Contacts to N-Face n-Type GaN via an O2 Plasma Treatment (IF 4.221 ; JCR 17.857%)

2011
작성자
유경종
작성일
2011-05-24 16:43
조회
146
저널명 : IEEE Electron Device Letters, 32(2) 149 (2011, FEB)
논문 저자
Su Jin Kim, Tae Yang Nam, and Tae Geun Kim*
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