Papers

Transparent Resistive Switching Memory using ITO/AlN/ITO Capacitors (IF 4.221 ; JCR 17.857%)

2011
작성자
유경종
작성일
2011-05-24 16:45
조회
151
저널명 : IEEE Electron Device Letters, 32(8) 1125-1127 (2011, AUG)
논문 저자
 Hee-Dong Kim, Ho-Myoung An, Yujeong Seo, and Tae Geun Kim*

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