Papers

Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications (IF 2.305 ; JCR 42.784%)

2012
작성자
유경종
작성일
2012-05-24 17:10
조회
150
저널명 : Microelectronic Engineering, 98 351-354 (2012, OCT)
논문 저자
Hee-dong Kim, Ho-Myoung An, and Tae Geun Kim*
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