Papers

Comparative investigation of endurance and bias temperature instability characteristics in metal-Al2O3-nitride-oxide-semiconductor (MANOS) and semiconductor-oxide-nitride-oxide-semiconductor (SONOS) charge trap flash memory (IF 0.364 ; JCR 96.429%)

2012
작성자
유경종
작성일
2012-05-24 17:17
조회
135
저널명 : Journal of Semiconductor Technology and Science, 12(4) 449-457 (2012, DEC)
논문 저자
Kim, Dae Hwan; Park, Sungwook; Seo, Yujeong; Kim, Tae Geun; Kim, Dong Myong; Cho, Il Hwan
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