Papers

Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices (IF 0.535 ; JCR 93.529% )

2012
작성자
유경종
작성일
2012-05-24 17:19
조회
159
저널명 : Journal of Korean Physical Society, 60(8) 1258-1262 (2012, APR)
논문 저자
Su Jin Kim, Sung Hun Son and Tae Geun Kim *
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