Papers

Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode (IF 2.03 ; JCR 51.935% )

2013
작성자
유경종
작성일
2013-05-24 17:40
조회
146
저널명 : Thin Solid Film, 534 603-608 (2013, MAY)
논문 저자
Koteswara Rao Peta, Byung-Guon Park, Sang-Tae Lee, Moon-Deock Kim, Jae-Eung Oh, Tae Geun Kim, V. Rajagopal Reddy*
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