Papers

A four-bit-per-cell program method with substrate-bias assisted hot electron injection for charge trap flash memory devices (IF 1.134 ; JCR 77.119% )

2013
작성자
유경종
작성일
2013-05-24 17:43
조회
159
저널명 : Journal of Nanoscience and Nanotechnology, 13(5) 3293-3297 (2013, MAY)
논문 저자
Ho Myoung An, Hee Dong Kim, Byung Cheul Kim, and Tae Geun Kim*
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