Papers

Forming‐free Si N‐based resistive switching memory prepared by RF sputtering (IF 1.759 ; JCR 63.043% )

2013
작성자
유경종
작성일
2013-05-24 17:47
조회
149
저널명 : Physica Status Solidi A Applications and Materials science, 210(9) 1822-1827 (2013, SEP)
논문 저자
Hee Dong Kim, Ho Myoung An, Seok Man Hong, and Tae Geun Kim*
chevron-down