Papers

Bipolar resistive-switching phenomena and resistive-switching mechanisms observed in zirconium nitride-based resistive-switching memory cells (IF 1.407 ; JCR 71.617% )

2013
작성자
유경종
작성일
2013-05-24 17:50
조회
146
저널명 : IEEE Transactions on Device and Materials Reliability, 13(1) 252-257 (2013, MAR)
논문 저자
Hee Dong Kim, Ho Myoung An, and Tae Geun Kim*
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