Papers

Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells (IF 2.286 ; JCR 45.484% )

2014
작성자
유경종
작성일
2014-05-24 18:29
조회
136
저널명 : Journal of Applied Physics, 115(9) 094305 (2014, MAR)
논문 저자
Min Ju Yun, Hee Dong Kim, Seok Man Hong, Ju Hyun Park and Tae Geun Kim*
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