Papers

Size-dependent resistive switching properties of the active region in nickel nitride-based crossbar array resistive random access memory (IF 1.134 ; JCR 77.119%)

2014
작성자
유경종
작성일
2014-05-24 18:32
조회
141
저널명 : Journal of Nanoscience & Nanotechnology, 14(12) 9088-9091 (2014, DEC)
논문 저자
Hee-Dong Kim, Min Ju Yun, Seok Man Hong, and Tae Geun Kim*
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