Papers

Deep‐ultraviolet AlGaN light‐emitting diodes with variable quantum well and barrier widths (IF 1.759 ; JCR 63.043% )

2014
작성자
유경종
작성일
2014-05-24 18:36
조회
164
저널명 : Physica Status Solidi A-Applications & Materials Science, 211(3) 656-660 (2014, MAR)
논문 저자
Su Jin Kim, and Tae Geun Kim*
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