Papers

Charge-trap flash memory using zirconium-nitride-based memristor switches (IF 3.169 ; JCR 28.065%)

2015
작성자
유경종
작성일
2015-05-24 18:40
조회
182
저널명 : Journal of Physics D: Applied Physics, 48(44) 445102 (2015, NOV)
논문 저자
Kim, Hee-Dong; Kim, Kyeong Heon; An, Ho-Myoung; Kim, Tae Geun*
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