Papers

Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx:O Bilayer Structure (IF 4.221 ; JCR 17.857%)

2015
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유경종
작성일
2015-05-24 18:40
조회
170
저널명 : IEEE Electron Device Letters, 36(10) 1024-1026 (2015, OCT)
논문 저자
Tae-ho lee, Ju Hyun Park, Tae Geun Kim*
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