Papers

Design of electron blocking layers for improving internal quantum efficiency of InGaN/AlGaN-based ultraviolet light-emitting diodes (IF 1.810 ; JCR 57.742% )

2015
작성자
유경종
작성일
2015-05-24 18:42
조회
172
저널명 : Applied Physics A-Materials science & processing, 120(3) 841-846 (2015, SEP)
논문 저자
Tae Hoon Park and Tae Geun Kim*
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