Papers

Self-rectifying resistive-switching characteristics with ultralow operating currents in SiOxNy/AlN bilayer devices (IF 3.597 ; JCR 23.548% )

2015
작성자
유경종
작성일
2015-05-24 18:44
조회
169
저널명 : Applied Physics Letters, 106(22) 223506 (2015, JUN)
논문 저자
Jeong Yong Kwon, Ju Hyun Park, Tae Geun Kim*
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