Papers

Improved resistive switching properties by nitrogen doping in tungsten oxide thin films (IF 2.03 ; JCR 51.935% )

2015
작성자
유경종
작성일
2015-05-24 18:44
조회
186
저널명 : Thin Solid Films, 583 81-85 (2015, MAY)
논문 저자
Seok Man Hong, Hee-Dong Kim, Min Ju Yun, Ju Hyun Park, Dong Su Jeon, Tae Geun Kim*
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