Papers

Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices (IF 3.597 ; JCR 23.548% )

2015
작성자
유경종
작성일
2015-05-24 18:45
조회
164
저널명 : Applied Physics Letters, 106(20) 203101 (2015, MAY)
논문 저자
Myung Ju Kim, Dong Su Jeon, Ju Hyun Park, and Tae Geun Kim*
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