Papers

Forming‐free resistive switching characteristics and improved reliability in sub‐stoichiometric NbNx films (IF 2.291 ; JCR 44.839% )

2015
작성자
유경종
작성일
2015-05-24 18:47
조회
156
저널명 : Physica Status Solidi - Rapid Research Letters, 9(4) 264-268 (2015, APR)
논문 저자
Hee-Dong Kim, Min Ju Yun and Tae Geun Kim*
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