Papers

Effects of oxygen doping concentration on resistive switching in NiN-based resistive switching memory (IF 1.351 ; JCR 68.71% )

2015
작성자
유경종
작성일
2015-05-24 18:47
조회
160
저널명 : Journal of Vacuum Science & Technology B, 33(1) 010602 (2015, JAN)
논문 저자
Dong Su Jeon, Ju Hyun Park and Tae Geun Kim*
chevron-down