Papers

Improved characteristics of amorphous indium-gallium-zinc-oxide-based resistive random access memory using hydrogen post-annealing (IF 3.597 ; JCR 23.548% )

2016
작성자
유경종
작성일
2016-05-24 18:53
조회
151
저널명 : Applied Physics Letters, 190(7) 073105 (2016, AUG)
논문 저자
Dae Yun Kang, Tae-Ho Lee and Tae Geun Kim*
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