Papers

Performance of GaN-on-Si-based vertical light-emitting diodes using silicon nitride electrodes with conducting filaments: correlation between filament density and device reliability (IF 3.669 ; JCR 19.072% )

2016
작성자
유경종
작성일
2016-05-24 18:54
조회
149
저널명 : Optics Express, 24(16) 17711-17719 (2016, AUG)
논문 저자
Kyeong Heon Kim, Su Jin Kim, Tae Ho Lee, Byeong Ryong Lee and Tae Geun Kim*
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