Papers

Ti-doped GaOx Resistive Switching Memory with Self-rectifying Behavior by using NbOx/Pt Bilayers (IF 8.758 ; JCR 10.35% )

2017
작성자
유경종
작성일
2017-05-24 19:00
조회
157
저널명 : ACS Applied Materials & Interfaces 9(49), 43336-43342 (2017, DEC)
논문 저자
Park, Ju Hyun; Jeon, Dong Su; Kim, Tae Geun*
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