Papers

Improved uniformity in the switching characteristics of ZnO-based memristors using Ti sub-oxide layers (IF 3.169 ; JCR 28.065%)

2017
작성자
유경종
작성일
2017-05-24 19:03
조회
163
저널명 : Journal of Physics D: Applied Physics, 50(1) 015104 (2017, JAN)
논문 저자
Ju Hyun Park, Dong Su Jeon and Tae Geun Kim* 
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