Papers

Ag:SiOxNy-Based Bilayer ReRAM Structure with Self-Limiting Bidirectional Threshold Switching Characteristics for Cross-Point Array Application / ACS Applied Materials & Interfaces (IF: 8.758; JCR 10.350%)

2018
작성자
손경락
작성일
2018-05-24 18:23
조회
186
  • 저널명 : ACS Applied Materials & Interfaces 10(40), 33768-33772 (2018, OCT)
    논문 저자
    Tae Ho Lee, Dae Yun Kang, and Tae Geun Kim*
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