Papers

A novel low-temperature resistive NO gas sensor based on InGaN/GaN multi-quantum well-embedded p–i–n GaN nanorods / Dalton Transactions (IF 4.099 ; JCR 12.222%)

2019
작성자
김나현
작성일
2019-05-24 15:37
조회
187
저널명 : Dalton Transactions, 48 1367–1375 (2019, JAN)
논문 저자
Maddaka Reddeppa, Byung-Guon Park, Nguyen Duc Chinh, Dojin Kim, Jae-Eung Oh, Tae Geun Kim and Moon-Deock Kim*
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