Papers

Retention Enhancement through Capacitance-Dependent Voltage Division Analysis in 3D Stackable TaOx/HfO2-Based Selectorless Memristor / Materials & Design (IF 6.289 ; JCR 18.631%)

2021
작성자
thlee12
작성일
2021-05-24 11:33
조회
411
저널명 : Materials & Design 207, 109845 (2021, SEP)
논문 저자
Ji Hoon Sung, Ju Hyun Park, Dong Su Jeon, Donghyun Kim, Min Ji Yu, Atul C. Khot, Tukaram D. Dongale, and Tae Geun Kim*
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