Papers

전체 250
번호 제목 작성자 작성일 추천 조회
16
Hydrogen passivation effects under negative bias temperature instability stress in metal silicon-oxide silicon-nitride silicon-oxide silicon capacitors for flash memories (IF 1.535 ; JCR 67.419% )
유경종 | 2010.05.24 | 추천 0 | 조회 129
유경종 2010.05.24 0 129
15
High efficiency GaN light-emitting diodes with two dimensional photonic crystal structures of deep-hole square lattices (IF 2.384 ; JCR 39.691% )
유경종 | 2010.05.24 | 추천 0 | 조회 117
유경종 2010.05.24 0 117
14
A Direct Observation of the Distributions of Local Trapped-Charges and the Interface-States near the Drain Region of the Silicon–Oxide–Nitride–Oxide–Silicon Device for Reliable Four-Bit/Cell Operations (IF 1.376 ; JCR 72.581% )
유경종 | 2010.05.24 | 추천 0 | 조회 114
유경종 2010.05.24 0 114
13
Electrodeposition of Cu(In,Ga)Se2 Crystals on High-Density CdS Nanowire Arrays for Photovoltaic Applications (IF 4.089 ; JCR 17.308% )
유경종 | 2010.05.24 | 추천 0 | 조회 126
유경종 2010.05.24 0 126
12
A new class of charge-trap flash memory with resistive switching mechanisms (IF 2.913 ; JCR 34.516% )
유경종 | 2010.05.24 | 추천 0 | 조회 128
유경종 2010.05.24 0 128
11
Effects of Nanometer-Scale Photonic Crystal Structures on the Light Extraction from GaN Light-Emitting Diodes (IF 2.384 ; JCR 39.691% )
유경종 | 2010.05.24 | 추천 0 | 조회 133
유경종 2010.05.24 0 133
10
InGaN/GaN White Light-Emitting Diodes Embedded With Europium Silicate Thin Film Phosphor (IF 2.384 ; JCR 39.691% )
유경종 | 2010.05.24 | 추천 0 | 조회 128
유경종 2010.05.24 0 128
9
Improved electrical and reliability characteristics in metal/oxide/nitride/oxide/ silicon capacitors with blocking oxide layers formed under the radical oxidation process (IF 1.134 ; JCR 77.119% )
유경종 | 2010.05.24 | 추천 0 | 조회 108
유경종 2010.05.24 0 108
8
High power single lateral-mode operation of InAs quantum dot based ridge type laser diodes by utilizing a double bend waveguide structure (IF 3.597 ; JCR 23.548% )
유경종 | 2010.05.24 | 추천 0 | 조회 108
유경종 2010.05.24 0 108
7
Negative/positive-bias instability analysis of the memory characteristics improved by hydrogen post-annealing in MANOS capacitors (IF 1.407 ; JCR 71.617% )
유경종 | 2010.05.24 | 추천 0 | 조회 128
유경종 2010.05.24 0 128
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