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Electrical properties of Cr-doped SrTiO3 films as a switch material in ReCTF devices (IF 2.305 ; JCR 42.784%)

2012
작성자
유경종
작성일
2012-05-24 17:09
조회
183
저널명 : Microelectronic Engineering, 98 321-324 (2012, OCT)
논문 저자
Yujeong Seo, Yeon Soo Kim, Minyeong Song, Ho-Myoung An, Hee-Dong Kim, Yun-Mo Sung, and Tae Geun Kim*
« Application of nanosphere lithography to charge trap flash memories with patterned Si3N4 trap layers (IF 2.305 ; JCR 42.784%)
Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications (IF 2.305 ; JCR 42.784%) »
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