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Electrical properties of Cr-doped SrTiO3 films as a switch material in ReCTF devices (IF 2.305 ; JCR 42.784%)
2012
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유경종
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2012-05-24 17:09
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저널명 : Microelectronic Engineering, 98 321-324 (2012, OCT)
논문 저자
Yujeong Seo, Yeon Soo Kim, Minyeong Song, Ho-Myoung An, Hee-Dong Kim, Yun-Mo Sung, and Tae Geun Kim*
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Electrical-properties-of-Cr-doped-SrTiO3-films-as-a-switch-material-in-ReCTF-devices.pdf
«
Application of nanosphere lithography to charge trap flash memories with patterned Si3N4 trap layers (IF 2.305 ; JCR 42.784%)
Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications (IF 2.305 ; JCR 42.784%)
»
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