검색:
Introduction
About ASL
Office & Infra
Research
Display & Energy Devices
Micro/Deep UV LEDs
Organic LEDs & Photovoltaics
Perovskite LEDs
Memory & TFT
PRAM
ReRAM
Neuromorphic Devices
2D/Oxide TFTs
Project
Member
Professor
Researcher
Alumni
Publication
Papers
Conferences
Patents
Awards
Community
News & Notice
Gallery
닫기
Menu
Introduction
About ASL
Office & Infra
Research
Display & Energy Devices
Micro/Deep UV LEDs
Organic LEDs & Photovoltaics
Perovskite LEDs
Memory & TFT
PRAM
ReRAM
Neuromorphic Devices
2D/Oxide TFTs
Project
Member
Professor
Researcher
Alumni
Publication
Papers
Conferences
Patents
Awards
Community
News & Notice
Gallery
close
Papers
Home
»
Papers
Electrical properties of Cr-doped SrTiO3 films as a switch material in ReCTF devices (IF 2.305 ; JCR 42.784%)
2012
작성자
유경종
작성일
2012-05-24 17:09
조회
229
저널명 : Microelectronic Engineering, 98 321-324 (2012, OCT)
논문 저자
Yujeong Seo, Yeon Soo Kim, Minyeong Song, Ho-Myoung An, Hee-Dong Kim, Yun-Mo Sung, and Tae Geun Kim*
좋아요
0
싫어요
0
인쇄
Electrical-properties-of-Cr-doped-SrTiO3-films-as-a-switch-material-in-ReCTF-devices.pdf
«
Application of nanosphere lithography to charge trap flash memories with patterned Si3N4 trap layers (IF 2.305 ; JCR 42.784%)
Resistive-switching behavior in Ti/Si3N4/Ti memory structures for ReRAM applications (IF 2.305 ; JCR 42.784%)
»
목록보기
Powered by KBoard
search
close
sign-in
bars
angle-double-up
ellipsis-v
chevron-down