Papers

Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices (IF 0.535 ; JCR 93.529% )

2012

작성자

유경종

작성일

2012-05-24 17:19

조회

231

저널명 : Journal of Korean Physical Society, 60(8) 1258-1262 (2012, APR)

논문 저자

Su Jin Kim, Sung Hun Son and Tae Geun Kim *

« Epitaxial structure optimization of nonpolar a-plane GaN light-emitting diodes (IF 0.535 ; JCR 93.529% )

Solution–liquid–solid growth of high-density CdTe nanowires on glass substrates and core/shell structure formation (IF 3.117 ; JCR 25% ) »

목록보기

Powered by KBoard