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Improved light output power in GaN-based vertical light-emitting diodes with p-AlInGaN/GaN superlattices (IF 0.535 ; JCR 93.529% )
2012
작성자
유경종
작성일
2012-05-24 17:19
조회
231
저널명 :
Journal of Korean Physical Society, 60(8) 1258-1262 (2012, APR)
논문 저자
Su Jin Kim, Sung Hun Son and Tae Geun Kim *
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Improved-light-output-power-in-GaN-based-vertical-light-emitting-diodes-....pdf
«
Epitaxial structure optimization of nonpolar a-plane GaN light-emitting diodes (IF 0.535 ; JCR 93.529% )
Solution–liquid–solid growth of high-density CdTe nanowires on glass substrates and core/shell structure formation (IF 3.117 ; JCR 25% )
»
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