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Highly transparent conductive Ag/Ga2O3 electrode for nearultraviolet lightemitting diodes (IF 1.759 ; JCR 63.043% )
2014
작성자
유경종
작성일
2014-05-24 18:27
조회
187
저널명 :
Physica Status Solidi A-Applications & Materials Science, 211(8) 1760-1763 (2014, AUG)
논문 저자
Kie Young Woo, Jae Hoon Lee, Kyeong Heon Kim, Su Jin Kim, and Tae Geun Kim*
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Highly-transparent-conductive-AgGa2O3-electrode-for-nearultraviolet....pdf
«
Transparent multi-level resistive switching phenomena observed in ITO/RGO/ITO memory cells by the sol-gel dip-coating method (IF 3.998 ; JCR 23.239% )
Effect of embedded metal nanocrystals on the resistive switching characteristics in NiN-based resistive random access memory cells (IF 2.286 ; JCR 45.484% )
»
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