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Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arrays (IF 3.551 ; JCR 25.484%)
2014
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유경종
작성일
2014-05-24 18:32
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234
저널명 :
Nanotechnology, 25(12) 125201 (2014, MAR)
논문 저자
Hee-Dong Kim Min Ju Yun, Seok Man Hong, Tae Geun Kim*
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Effect-of-nanopyramid-bottom-electrodes-on-bipolar-resistive-switching-....pdf
«
Size-dependent resistive switching properties of the active region in nickel nitride-based crossbar array resistive random access memory (IF 1.134 ; JCR 77.119%)
Highly uniform resistive switching in SiN nanorod devices fabricated by nanosphere lithography (IF 3.086 ; JCR 28.71% )
»
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