Papers

Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arrays (IF 3.551 ; JCR 25.484%)

2014

작성자

유경종

작성일

2014-05-24 18:32

조회

234

저널명 : Nanotechnology, 25(12) 125201 (2014, MAR)

논문 저자

Hee-Dong Kim Min Ju Yun, Seok Man Hong, Tae Geun Kim*

« Size-dependent resistive switching properties of the active region in nickel nitride-based crossbar array resistive random access memory (IF 1.134 ; JCR 77.119%)

Highly uniform resistive switching in SiN nanorod devices fabricated by nanosphere lithography (IF 3.086 ; JCR 28.71% ) »

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