Papers

Highly uniform resistive switching in SiN nanorod devices fabricated by nanosphere lithography (IF 3.086 ; JCR 28.71% )

2014

작성자

유경종

작성일

2014-05-24 18:34

조회

191

저널명 : Applied Physics Express, 7(2) 024202 (2014, FEB)

논문 저자

Hee Woong Shin, Ju Hyun Park, Ho Young Chung, Kyeong Heon Kim, Hee-Dong Kim and Tae Geun Kim*

« Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arrays (IF 3.551 ; JCR 25.484%)

Improved resistive switching phenomena observed in SiNx‐based resistive switching memory through oxygen doping process (IF 2.291 ; JCR 44.839% ) »

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