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Highly uniform resistive switching in SiN nanorod devices fabricated by nanosphere lithography (IF 3.086 ; JCR 28.71% )
2014
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유경종
작성일
2014-05-24 18:34
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220
저널명 :
Applied Physics Express, 7(2) 024202 (2014, FEB)
논문 저자
Hee Woong Shin, Ju Hyun Park, Ho Young Chung, Kyeong Heon Kim, Hee-Dong Kim and Tae Geun Kim*
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Highly-uniform-resistive-switching-in-SiN-nanorod-devices-fabricated-by-....pdf
«
Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arrays (IF 3.551 ; JCR 25.484%)
Improved resistive switching phenomena observed in SiNx‐based resistive switching memory through oxygen doping process (IF 2.291 ; JCR 44.839% )
»
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