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Improved resistive switching phenomena observed in SiNx‐based resistive switching memory through oxygen doping process (IF 2.291 ; JCR 44.839% )

2014
작성자
유경종
작성일
2014-05-24 18:35
조회
235
저널명 : Physica Status Solidi-Rapid Research Letters, 8(3) 239-242 (2014, MAR)
논문 저자
Ju Hyun Park, Hee-Dong Kim, Seok Man Hong, Min Ju Yun, Dong Su Jeon, and Tae Geun Kim*
« Highly uniform resistive switching in SiN nanorod devices fabricated by nanosphere lithography (IF 3.086 ; JCR 28.71% )
Ga2O3:ITO Transparent Conducting Electrodes for Near-Ultraviolet Light-Emitting Diodes (IF 4.221 ; JCR 17.857%) »
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