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Deep‐ultraviolet AlGaN light‐emitting diodes with variable quantum well and barrier widths (IF 1.759 ; JCR 63.043% )
2014
작성자
유경종
작성일
2014-05-24 18:36
조회
229
저널명 :
Physica Status Solidi A-Applications & Materials Science, 211(3) 656-660 (2014, MAR)
논문 저자
Su Jin Kim, and Tae Geun Kim*
좋아요
0
싫어요
0
인쇄
Deep‐ultraviolet-AlGaN-light‐emitting-diodes-with-variable-quantum....pdf
«
Ga2O3:ITO Transparent Conducting Electrodes for Near-Ultraviolet Light-Emitting Diodes (IF 4.221 ; JCR 17.857%)
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